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Microstructural Analysis Unit



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Katie McBean

Katie McBean

Katie E McBean BAppSc(Hons) (Tas)
Professional Officer Operations

Microstructural Analysis Unit
PO Box 123, Broadway NSW 2007

Temporarily Located in:
Bradshaw Building
Cnr Jones St and Broadway

Phone:
Fax:
Office:

+61 2 9514 7817
+61 2 9514 1703
CB04.01.34

Primary staff contact for the following instruments:

  • FEI Quanta 200 Environmental Scanning Electron Microscope (ESEM)
  • Gatan MONOCL3 Cathodoluminescence System
  • FEI XL30 ESEM
  • Varian Eclipse Fluorescence Spectrophotometer
  • Kleindiek Micromanipulators

Research Interests:

  • Synthesis of zinc oxide nanostructures
  • Cathodoluminescence and Photoluminescence of zinc oxide
  • ESEM imaging of unconventional specimens

Recent publications:

Mi Jung Choi, Katie E. McBean, Ping Hei R. Ng, Andrew M. McDonagh, Philip J. Maynard, Chris Lennard, Claude Roux, An evaluation of nanostructured zinc oxide as a fluorescent powder for fingerprint detection. Journal of Materials Science, in press.

Motlan, G. Zhu, K. Drozdowicz-Tomsia, K. McBean, M.R. Phillips, E.M. Goldys, Annealing of ZnS nanocrystals grown by colloidal synthesis. Optical Materials 29, 2007, 1579-1583.

J. Liu, K. E. McBean, N. Harris & M. B. Cortie, Optical properties of suspensions of gold half-shells. Materials Science and Engineering B, 140, 2007, pp.195-198.

Cortie, Michael B.; McBean, Katie E.; Elcombe, Margaret M. Fracture mechanics of mollusc shells. Physica B: Condensed Matter 2006, 385-386(Pt. 1), 545-547.

McBean, Katie E.; Phillips, Matthew R.; Goldys, Ewa M. Synthesis and Characterization of Doped and Undoped ZnO Nanostructures. Microscopy and Microanalysis 2006, 12(4), 327-330.

Choi, M.J., McBean, K.E., Wuhrer, R., McDonagh, A.M., Maynard, P.J., Lennard, C., Roux, C., Investigation into the Binding of Gold Nanoparticles to Fingermarks Using Scanning Electron Microscopy. Journal of Forensic Identification, 2006, 56, 24-32.

Mokkapati, S.; Lever, P.; Tan, H. H.; Jagadish, C.; McBean, K. E.; Phillips, M. R. Controlling the properties of InGaAs quantum dots by selective-area epitaxy. Applied Physics Letters 2005, 86(11), 113102/1-113102/3.